Integrated electronic device comprising a temperature sensor and sensing method

ABSTRACT

A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.

BACKGROUND

Technical Field

The present disclosure relates to an integrated electronic device comprising a temperature sensor and to the relevant sensing method.

Description of the Related Art

As is known, temperature sensors have a plurality of applications. For instance, they may be stand-alone components, which supply at output the temperature value of an environment. In addition, they may be a component of a more complex system, which includes other elements, the performance whereof varies with temperature. These variations are frequently undesirable so that it is useful to detect the existing temperature and compensate for the performance variations and make them independent of temperature. Also when the performance variation with temperature is the desired effect of the complex system, frequently it is in any case useful to have direct information on the local absolute temperature value.

Temperature sensors are built in very different ways, in particular according to the application and to whether they are of a stand-alone type or they are integrated in a more complex system. In the former case, in fact, frequently no problems of dimensions exist, and simpler but more cumbersome solutions may be used, whereas in the latter case the possibility of an integrated implementation with the other components of the system, in addition to the dimensions and consumption, may be important.

In case of temperature sensors integrated in an electronic circuit, it is known to exploit the variability with temperature of the base-emitter voltage of bipolar transistors. In fact, it is well known that this voltage has a variation of some millivolts per degree centigrade. By detecting the variation of voltage with a sensing circuit and amplifying it, with appropriate algorithms it is possible to determine the local temperature within the electronic circuit. This solution, albeit extremely widely adopted, is not free from disadvantages, due for example to the need of implementing bipolar components for MOS technology circuits and/or to the high consumption of the temperature sensor and the associated components, for example of conditioning and amplification stages associated to the temperature sensor. Furthermore, this solution has the disadvantage of giving rise to high noise, which may be disadvantageous in some applications. On the other hand, the known solutions have consumption levels that are the higher, the lower the level of maximum accepted noise. Not least, this solution does not always solve the problem since the base-emitter voltage read is generally compared with a reference value, generated through a different stage, such as a band-gap circuit, which in turn may vary with temperature. This behavior introduces an error in the output signal, so that the temperature value read may not have the desired precision.

In some known solutions, the sensing circuit comprises a resistive bridge for compensating for the temperature dependence in the reference element or circuit. However, also this solution is not free from disadvantages in so far as it introduces an undesirable consumption level.

More innovative solutions comprise, for example, the use of MEMS (Micro-Electrical-Mechanical System) technologies that enable creation of elements that may undergo mechanical deformation as the temperature varies (see, for example, “A Micromachined Silicon Capacitive Temperature Sensor for Radiosonde Applications” by Hong-Yu Ma, Qing-An Huang, Ming Qin, Tingting Lu, E-ISBN: 978-1-4244-5335-1/09, 2009 IEEE). Other known solutions are based upon the use of new materials (see, for example, “High-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide” by Chun-Hua Cai and Ming Qin, ELECTRONICS LETTERS, 28 Mar. 2013 Vol. 49 No. 7, ISSN: 0013-5194).

These solutions are, however, difficult to integrate in digital systems and thus not universally applicable.

BRIEF SUMMARY

One aim of the present disclosure is to provide a temperature sensor that overcomes the drawbacks of the prior art.

According to the present disclosure, an integrated electronic device exploits the fact that a reverse biased PN junction has an equivalent capacitance variable in a known way with temperature. This capacitance may be compared with a reference capacitance provided to have a negligible dependence upon temperature. A known sensing circuit, for example a switched capacitor operational amplifier, may then detect the capacitance variation with temperature and output a voltage that varies directly with the capacitance variation.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

For a better understanding of the present disclosure preferred embodiments thereof are now described, purely by way of non-limiting example, with reference to the attached drawings, wherein:

FIG. 1 shows the plot of the junction capacitance C_(j) of a junction diode as a function of the voltage applied V_(d);

FIG. 2 shows the variation of junction capacitance C_(j) of a junction diode as a function of temperature;

FIG. 3 shows a simplified circuit diagram of a present device according to a first embodiment of the present disclosure;

FIG. 4 shows the plot of electrical signals in the circuit of FIG. 3;

FIG. 5 shows a simplified circuit diagram of a present device according to a second embodiment of the present disclosure;

FIG. 6 shows the plot of electrical signals in the circuit of FIG. 5;

FIG. 7 shows the plot of the output voltage V_(o) of the circuit of FIG. 5; and

FIG. 8 shows a possible implementation of a temperature sensor according to the embodiments of FIGS. 3 and 5.

DETAILED DESCRIPTION

Present sensors according to embodiments of the present disclosure exploit the dependence upon temperature of the capacitance of a reverse biased PN-junction diode.

In fact, as is known, the contact potential (or built-in voltage) V_(bi) of a reverse biased PN diode is given by:

$\begin{matrix} {{V_{bi}(T)} = {\frac{k \cdot T}{q} \cdot {\ln\left( \frac{N_{A} \cdot N_{D}}{n_{i}(T)} \right)}}} & (1) \end{matrix}$ where K is Boltzmann's constant, T is the temperature in degrees Kelvin, q is the charge of the electron, N_(A) is the concentration of acceptor atoms, N_(D) is the concentration of donor atoms, and n_(i)(t) is the concentration of the intrinsic carriers in the PN diode. In particular, the concentration n_(i) of the intrinsic carriers depends upon the temperature T on the basis of Eq. (2):

$\begin{matrix} {n_{i}^{2} = {0.961 \cdot 10^{33} \cdot T^{3} \cdot e^{\frac{- {E_{Geff}{(T)}}}{k \cdot T}}}} & (2) \end{matrix}$ where E_(Geff) is the energy gap of the material used for integration of the diode.

In a PN diode, by applying a reverse voltage V_(d) thereto, a charge Q_(j) is stored on the junction:

$\begin{matrix} {{Q_{j}(T)} = \sqrt{2 \cdot q \cdot ɛ_{S} \cdot \frac{N_{D} \cdot N_{A}}{N_{D} + N_{A}} \cdot \left\lbrack {{V_{bi}(T)} - V_{d}} \right\rbrack}} & (3) \end{matrix}$ where ε_(s) is the dielectric constant of the semiconductor. As may be noted, the accumulated charge Q_(j) depends upon the temperature through the contact potential V_(bi), as well as upon the reverse voltage V_(d).

The junction capacitance C_(j) of the diode is thus:

$\begin{matrix} {{C_{j}\left( {T,{Vd}} \right)} = {{A_{D} \cdot \frac{{dQ}_{j}\left( {T,V} \right)}{dV}} = {A_{D} \cdot \frac{{Q_{j}\left( {T,{Vd}} \right)} - {Q_{j}\left( {T,{{Vd} - {dV}}} \right)}}{dV}}}} & (4) \end{matrix}$ where A is the area of the PN junction.

In practice, a PN diode formed in a silicon substrate has a junction capacitance depending both upon the biasing voltage and the temperature, as illustrated respectively in FIG. 1 (with a solid line) and in FIG. 2, calculated respectively at constant temperature (T=25° C.) and at constant reverse biasing voltage (V_(r)=0.625V). FIG. 1 also shows with a dashed line the plot of the junction capacitance determined using more accurate calculations.

In particular, as may be noted from FIG. 2, in temperature ranges wherein integrated circuits normally operate, the junction capacitance C_(j) has an approximately linear plot as a function of temperature. Consequently, to a first approximation, the reading of the junction capacitance C_(j) of a reverse biased PN diode has a relation of direct proportionality with the local temperature, and reading of the junction capacitance and/or of its variation supplies direct information on the temperature or on the temperature variation.

FIG. 3 shows a temperature sensor 1 that exploits the principle explained above.

In detail, the temperature sensor 1 comprises a sensor input 2 supplied with a sensor excitation signal, i.e., the timed biasing voltage DRH. A sensing diode 3, of a PN-junction type, has its cathode coupled to the sensor input 2 and its anode coupled to an inverting input 7 of an operational amplifier 4. A reference capacitor 5, having a reference capacitance C_(R), is coupled between the sensor input 2 and a non-inverting input 8 of the operational amplifier 4. The reference capacitance C_(R) is chosen so as to have the same value as the junction capacitance C_(j) at room temperature.

The inputs 7, 8 of the operational amplifier 4 are both coupled to a first reference potential line 10, set at a first common mode potential V_(CMin), through a respective input switch 11. The input switches 11 are controlled by a same reset signal R.

The operational amplifier 4 is of a fully differential type, has a pair of outputs 15, 16 and has a capacitive feedback formed by a first and a second feedback capacitors 17, 18, which have the same feedback capacitance C_(i). In detail, the first feedback capacitor 17 is coupled between the first output 15 and the inverting input 7, and the second feedback capacitor 18 is coupled between the second output 16 and the non-inverting input 8 of the operational amplifier 4. The outputs 15, 16 of the operational amplifier 4 are further coupled to a second reference potential line 20, set at a second common mode potential V_(CMout), through a respective output switch 21. The output switches 21 are controlled by the reset signal R.

A timed biasing voltage DRH is supplied on the input 2 and switches between a low value (for example, 0.625 V) and a high value V_(DRH) (for example, 1.25V). In particular, the low value is in any case positive for keeping the sensing diode 3 (which has its anode coupled to the virtual ground on the inverting input 7 of the operational amplifier 4) reverse biased in all the sensing phases, and the high value is chosen for generating a voltage step ΔV of a preset value, as explained in detail hereinafter.

In practice, in the temperature sensor 1 of FIG. 3, the sensing diode 3 and the reference capacitor 5 form a sensing element 25 and the operational amplifier 4, with the capacitive feedback, forms a switched capacitor differential amplifier stage of a known type and widely used, for example, in reading of MEMS structures.

The operational amplifier 4 and the relevant feedback network 17, 18, 11, 21 may be incorporated in an ASIC (Application Specific Integrated Circuit) 28.

The sensing diode 3 and the reference capacitor 5 may be formed in a semiconductor material chip, as described in greater detail with reference to FIG. 8.

The outputs 15 and 16 of the operational amplifier 4 are coupled to a processing stage 30, generally external to the temperature sensor 1 but possibly also integrated in the ASIC. The processing stage 30 may comprise circuits for amplification of the output voltage V_(o) and for analog-to-digital conversion.

Finally, a timing stage 31 generates biasing/timing signals for the temperature sensor 1 and for the processing stage 30, such as the reset signal R, the timed biasing voltage DRH, and a reading acquisition signal S for the processing stage 30.

Sensing of the output voltage V_(o) of the operational amplifier 4 is obtained according to the timing, illustrated in FIG. 4, which includes the succession of a reset phase and a sensing phase that follow each other in an acquisition period T₁ equal to one half of a sensing period T₂=2·T₁, as described in detail hereinafter. In particular, the reset signal R and the reading acquisition signal S have the same period, but different duty cycle. For this reason, hereinafter the sensing period T₂ is considered as being divided into two half periods T₁₁ and T₁₂, corresponding to two successive periods of the acquisition period T₁.

Reset Phase—First Half Period T₁₁

At instant t₀ the reset signal R switches to the high state, causing the input switches 11 and of the output switches 21 to switch off. Consequently, the inputs 7, 8 of the operational amplifier 4 are coupled to the first common mode potential V_(CMin) (for example, 0.625 V, i.e., to the low value of the timed biasing voltage DRH), and the outputs 15, 16 of the operational amplifier 4 are coupled to the second common mode potential V_(CMout) (for example, 1 V), thus resetting the operational amplifier 4.

In this step, the timed biasing voltage DRH (for example, 0.625 V) is low, as likewise is the reading acquisition signal S. The output voltage V_(o) is thus not acquired by the signal processing stage 30.

Next, at instant t₁, the reset signal R switches to the low state, causing opening of the input and output switches 11, 21 and causing the input nodes 7, 8 and output nodes 15, 16 of the operational amplifier 4 to be independent. The timed biasing voltage DRH is low, as is the reading acquisition signal S.

The step t₁-t₂ may be adopted in case of use of the correlated double sampling (CDS) technique. During this step, in fact, with the technique referred to, offset sampling is carried out, which may then be subtracted during the sensing phase. In this way, it is possible to reduce the offset.

Sensing Phase—First Half Period T₁₁

At the instant t₂, the timed biasing voltage DRH has a rising edge and reaches a value that reverse biases the sensing diode 3, for example, at 1.25 V. In this condition, neglecting possible losses, a reverse current flows in the sensing diode 3. Further, a reference current flows in the reference capacitor 5. There is thus a charge displacement Q₁ (according to the law in Eq. (3), where V_(d) is here the timed biasing voltage DRH) from the sensing diode 3 to the operational amplifier 4 and a charge displacement Q₂ (according to the law Q=C/ΔV, where ΔV is the step of the timed biasing voltage DRH) from the reference capacitor 5 to the operational amplifier 4. As a result of the half bridge configuration of the sensing element 25 and of the feedback network of the amplifier 26, the latter is traversed by a differential charge Q₂−Q₁ that is a function of the amplitude of the step ΔV of the timed biasing voltage DRH, of the capacitance difference ΔC (difference between the junction capacitance C_(j) of the sensing diode, and the capacitance C_(R) of the reference capacitor 5), and of the capacitances C_(i) of the feedback capacitors 17, 18.

Consequently, between the outputs 15 and 16 of the operational amplifier 4 there is an output voltage V_(o)

$\begin{matrix} {{V_{o}(t)} \propto {\frac{\Delta\; C}{C_{i}}\Delta\; V}} & (5) \end{matrix}$ which is acquired by the signal processing stage by virtue of the high value of reading acquisition signal S.

In this connection, since the time plot of the output voltage V_(o) has a transient step, acquisition of the output voltage V_(o) is made during the subsequent steady state step regime, and the involved time is calculated taking into account the bandwidth of the operational amplifier 4.

This step terminates at instant t₃, where a new period T₁ of the reading acquisition signal S and of the reset signal R and the second half period T₁₂ of the sensing signal DRH start.

Reset Phase—Second Half Period T₁₂

At instant t₃, the reset signal R switches to high, and the reading acquisition signal S switches to low. The operational amplifier 4 is thus reset again, in a way generally similar to what described for the reset phase of the first half period T₁₁, with the only difference that, now, the timed biasing voltage DRH is high. This value does not, however, affect the reset phase since, as before, the operational amplifier 4 is reset, and the output voltage V_(o) is not acquired by the signal processing stage 30.

At instant t₄, the reset signal R switches again to low.

Sensing Phase—Second Half Period T₁₂

At the instant t₅, the timed biasing voltage DRH has a falling edge, thus causing a charge displacement opposite to that of the sensing phase in the first half period. Consequently, the output voltage V_(o) has a value

$\begin{matrix} {{V_{o}(t)} \propto {\frac{\Delta\; C}{C_{i}}\Delta\; V}} & (6) \end{matrix}$ with a opposite sign to Eq. (5), since in this half period T₁₂ the step ΔV of the timed biasing voltage DRH is a down step and is equal to −V_(DRH).

Also in this step, the value of the output voltage V_(o) is acquired from the signal processing stage 30 thanks to the high value of the reading acquisition signal S. The signal processing stage 30 thus modifies the sign of the output voltage V_(o) in one of the two half periods T₁₁ and T₁₂, in a way synchronized with the sensing period T₂.

This step terminates at instant t₃, where a new period T₁ of the reading acquisition signal S and of the reset signal R starts, as well as a new period T₂ of the sensing signal DRH.

The solution illustrated in FIG. 3 thus enables detection of the absolute temperature in the area of the sensing diode 3 on the basis of the variation of its reverse junction capacitance, using a simple voltage biased capacitive bridge. This solution presents the advantage of having a zero current consumption and a very simple structure, which does not require use of MEMS capacitive structures.

However, the sensing diode 3 intrinsically presents a current leakage that, in some situations, may reduce reading precision in an undesirable way.

In fact, the aforesaid current leakage of the sensing diode 3 determines a variation of the charge Q₁. In fact, during the sensing phase, the sensing diode 3 undergoes a displacement of charge equal to Q₁−Q_(L), where Q_(L) is the charge due to the leakage current. A more precise approximation of the output voltage V_(o) is thus the following:

$\begin{matrix} {{V_{o}(t)} \propto {{\frac{\Delta\; C}{C_{i}}\Delta\; V} + {I_{L} \cdot C_{i} \cdot \frac{T_{1}}{2}}}} & (7) \end{matrix}$ where I_(L) is the leakage current of the sensing diode 3.

FIG. 5 shows an embodiment wherein the leakage current I_(L) of the sensing diode 3 is compensated.

In particular, the temperature sensor of FIG. 5 has the same basic structure as the temperature sensor of FIG. 3, where a compensation diode 40 and a symmetry capacitor 41, having a capacitance equal to the capacitance C_(R) of the reference capacitor 5, have been added. The elements in common with those of FIG. 3 are thus designated by the same reference numbers.

In detail, the compensation diode 40 has its anode coupled to the non-inverting input 8 of the operational amplifier 4 and its cathode coupled to a third reference potential line 43, set at a non-constant biasing potential V_(STB), and the symmetry capacitor 41 is coupled between the inverting input 7 of the operational amplifier 4 and the third reference potential line 43.

The biasing potential V_(STB) switches between two positive values, for example between 0 V and 2.5 V, to be surely higher than the potential on the inputs 7 and 8 of the operational amplifier 4 and keep the compensation diode 40 reverse biased.

Two current generators 45 are also illustrated in FIG. 5 and represent the leakage currents I_(L) of the sensing diode 3 and of the compensation diode 40. In practice, the sensing diode 3, the reference capacitor 5, the compensation diode 40, and the symmetry capacitor 41 form a capacitive bridge 44.

As illustrated in the timing diagram of FIG. 6, where the signals R, DRH, S have the same meaning as in FIG. 4, and the switching instants t₀-t₅ correspond to the above, the biasing potential V_(STB) switches at the rising edge of the reset signal R, thus at frequency f₂=1/T₂ equal to one half of the frequency (f₁=1/T₁) of the reset signal R and equal to the frequency of the sensing signal DRH. It follows that the effects of switching of the biasing potential V_(STB) do not affect the operational amplifier 4 since, during the reset phase, the inputs 7, 8 of the latter are coupled to the first common mode potential V_(CMin). Furthermore, the biasing potential V_(STB) has the same sign as the timed biasing voltage DRH during the sensing phase; namely, it is positive with respect to the virtual ground on the inputs 7 and 8 of the operational amplifier 4 for keeping the compensation diode 40 reverse biased in all the sensing phases and to have a voltage step ΔV equal to the step of the sensing signal DHR in order to keep the compensation diode 40 in the same operating conditions as the sensing diode 3.

In this way, during the sensing phase (both in the first half period T₁₁ and in the second half period T₁₂ of the sensing signal DRH), the feedback capacitors 17 and 18 are traversed by the following currents:

a current due to the differential charge generated by the switching edge of the timed biasing voltage DRH and depending on the difference of capacitance in the capacitive bridge 44;

a leakage current I_(L1) in the sensing diode 3; and

a leakage current I_(L2) in the compensation diode 40.

Consequently, the output voltage V_(o) of the temperature sensor of FIG. 5 may be expressed as follows:

$\begin{matrix} {{V_{o}(t)} \propto {{\frac{\Delta\; C}{C_{i}}\Delta\; V} + {I_{L\; 1} \cdot C_{i} \cdot \frac{T_{1}}{2}} - {I_{L\; 2} \cdot C_{i} \cdot \frac{T_{1}}{2}}}} & (8) \end{matrix}$

By manufacturing the compensation diode 40 in the same way and with the same parameters as the sensing diode 3, due also to the same reverse biasing of the diodes 3 and 40, they generate leakage currents I_(L1) and I_(L2) that are the same so that in Eq. (8) the two contributions of the leakage currents I_(L1) and I_(L2) cancel out, and the output voltage V_(o) may be expressed again by Eq. (6).

The effect of cancelling out of the leakage currents in the sensing diode 3 is visible in the simulation of FIG. 7, which reproduces the voltages on the non-inverting output 15 and on the inverting output 16 of the operational amplifier 4 in case of compensation of the leakage current of the sensing diode 3 (solid lines) and in the case without compensation (dashed lines).

As may be noted, the output voltage V_(o) of the operational amplifier 4 without compensation has a reading error proportional both to the leakage current and to the integration time. Instead, the output voltage V_(o) with compensation, after a transient, is insensitive to the above parameters.

FIG. 8 shows a possible implementation of the compensation diode 40 and of the symmetry capacitor 41. In the example illustrated, the temperature sensor 1 is formed in a chip 60 of semiconductor material, such as silicon, having a substrate 50 of a P type, accommodates a well 51 of an N type, which forms the cathode K of the compensation diode 40. The well 51 in turn accommodates a tap 52, of a P type, forming the anode A of the compensation diode 40.

An insulating layer 55 extends over the substrate 50 and accommodates two metal regions 56, 57, arranged on top of each other and formed, for example, in two different metallization levels of the chip 60. The metal regions 56, 57 form, together with the portion of the insulating layer 55 arranged in between, the reference capacitor 5.

The compensation diode 40 and the symmetry capacitor 41 may be formed in a similar way.

The described temperature sensor comprises only a few simple components of a capacitive type (sensing diode 3, reference capacitor 5, possibly a capacitive bridge 44) that may easily be integrated and require only a small area, which cooperate with a sensing network (operational amplifier 4 and corresponding feedback network) that may be manufactured using standard CMOS technology. The sensor has a zero d.c. biasing voltage, and thus a low current consumption.

The temperature sensor 1 may be compensated with respect to the current leakages by a few simple components (compensation diode 40, symmetry capacitor 41), thus supplying a particularly precise output.

Finally, it is clear that modifications and variations may be made to the embodiments of a temperature sensor described and illustrated herein, without thereby departing from the scope of the present disclosure. In particular, the switched capacitor differential amplifier 26 may be replaced by another type of sensing circuit, and/or be formed in a different way from what illustrated, for example be formed as a non-fully differential amplifier.

The various embodiments described above can be combined to provide further embodiments. All of the U.S. patents, U.S. patent application publications, U.S. patent applications, foreign patents, foreign patent applications and non-patent publications referred to in this specification and/or listed in the Application Data Sheet are incorporated herein by reference, in their entirety. Aspects of the embodiments can be modified, if necessary to employ concepts of the various patents, applications and publications to provide yet further embodiments.

These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the disclosure. 

The invention claimed is:
 1. A temperature sensor device comprising a sensing element integrated in a semiconductor material chip and sensitive to temperature, the sensing element including a sensing diode of a junction type configured to be reverse biased and the temperature sensor device including a sensing stage coupled to the sensing element, the sensing diode having a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the sensing stage, wherein the biasing node is configured to receive a voltage that is positive with respect to a voltage on the first input of the sensing stage and which switches between a low value and a high value causing a reverse voltage step to be applied across the sensing diode, wherein the sensing stage is configured to detect a capacitance variation of the sensing diode as a function of temperature in response to the reverse voltage step applied across the sensing diode and is configured to output a voltage that is a function of the capacitance variation of the sensing diode.
 2. The temperature sensor device according to claim 1, further comprising a reference capacitive element having a first terminal coupled to the biasing node and a second terminal coupled to a second input of the sensing stage.
 3. The temperature sensor device according to claim 2, wherein the sensing diode has junction capacitance at room temperature and the reference capacitive element has a reference capacitance of the same value as the junction capacitance at room temperature.
 4. The temperature sensor device according to claim 2, further comprising a compensation diode having its anode terminal coupled to the second input of the sensing stage and its cathode terminal coupled to a reference potential line, and a symmetry capacitor having a first terminal coupled to the first input of the sensing stage and a second terminal coupled to the reference potential line.
 5. The temperature sensor device according to claim 4, wherein the sensing stage is a switched capacitor differential amplifier.
 6. A sensing system, comprising: a sensing element including a sensing junction diode; a reading circuit coupled to the sensing element, the reading circuit configured to reverse bias the sensing junction diode and detect a junction capacitance of the sensing junction diode, and configured to generate an output signal based on the detected junction capacitance, the output signal indicating a temperature of an environment containing the junction diode; and a compensation circuit coupled to the sensing junction diode and configured to compensate for a leakage current through the sensing junction diode.
 7. The sensing system of claim 6, wherein the compensation circuit comprises a compensation diode formed to have a leakage that is approximately equal to the leakage current of the sensing junction diode.
 8. The sensing system of claim 6, wherein the sensing junction diode has a cathode coupled to a biasing node and an anode coupled to a first input of the reading circuit, wherein the biasing node is coupled to a voltage source configured to supply the biasing node with a voltage that is positive with respect to the first input of the reading circuit.
 9. The sensing system of claim 6, wherein the reading circuit comprises a switched capacitor differential amplifier that generates the output signal having a value given by: ${V_{o}(t)} \propto {\frac{\Delta\; C}{C_{i}}\Delta\; V}$ where ΔV is a change in value of a biasing voltage applied to the sensing junction diode, ΔC is a difference between the value of the junction capacitance of the sensing junction diode and a value of a reference capacitor of the switched capacitor differential amplifier, and the capacitance C_(i) are values of feedback capacitors of the switched capacitor differential amplifier.
 10. The sensing system of claim 9, wherein the switched capacitor differential amplifier comprises a fully differential amplifier.
 11. A temperature sensor device, comprising: a sensing diode configured to be reverse biased, the reverse biased sensing diode having a junction capacitance that is a function of temperature; a reference capacitive element having a capacitance that is substantially independent of temperature; and a sensing stage coupled to the sensing diode and the reference capacitive element, the sensing stage configured to generate an output signal based on a comparison of the junction capacitance of the sensing diode to the capacitance of the reference capacitive element, the output signal indicating a temperature of the sensing diode.
 12. The temperature sensor device of claim 11, wherein the sensing stage includes first and second inputs, and wherein the reference capacitive element includes a first node coupled to a biasing node configured to receive a biasing voltage and a second node coupled to the second input of the reading stage, and wherein the sensing diode has a cathode coupled to the biasing node and an anode coupled to a first input of the reading stage, the biasing voltage being positive with respect to a voltage on the first input of the reading stage.
 13. The temperature sensor device according to claim 12, further comprising: a compensation diode having an anode coupled to the second input of the reading stage and a cathode coupled to a reference potential node configured to receive a reference voltage; and a symmetry capacitor having a first node coupled to the first input of the reading stage and a second node coupled to the reference potential node.
 14. The temperature sensor device of claim 11, wherein the sensing stage is configured to detect a change in a current flowing through the sensing diode responsive to a change in a reverse biasing voltage across the sensing diode, the detected change in current indicating a change in capacitance of the sensing diode.
 15. The temperature sensor device of claim 14, wherein the sensing stage is further configured to detect a current through the reference capacitive element responsive to the change in the reverse biasing voltage.
 16. The temperature sensor device of claim 15, wherein the reference capacitive element has a capacitance value that is approximately equal to a value of the junction capacitance of the sensing diode at a room temperature.
 17. The temperature sensor device of claim 11, wherein the sensing stage comprises a switched capacitor operational amplifier.
 18. The temperature sensor device of claim 17, wherein the switched capacitor operational amplifier includes an inverting input, a non-inverting input, and first and second differential outputs, and further comprises a first feedback capacitor coupled between the non-inverting input and the first differential output and a second feedback capacitor coupled between the inverting input and the second differential output.
 19. The temperature sensor device of claim 18, wherein the switched capacitor operational amplifier further comprises: a first switching circuit coupled between each of the non-inverting input and the inverting input and a node configured to receive a first common mode voltage, the first switching circuit configured to receive a reset signal to control activation and deactivation of the first switching circuit; and a second switching circuit coupled between each of the first and second differential outputs and a node configured to receive a second common mode voltage, the second switching circuit configured to receive the reset signal to control activation and deactivation of the second switching circuit.
 20. The temperature sensor device of claim 19, wherein the sensing stage is formed in an application specific integrated circuit, and wherein the sensing diode and reference capacitive element are external to the application specific integrated circuit. 